Gallium Nitride (GaN) power devices switch faster and are more efficient than conventional silicon-based devices. This enables a new generation of power conversion solutions with reduced size, weight, and environmental impact.

Despite the great potential, Driving GaN High Electron Mobility Transistors (GaN HEMTs) presents unique challenges owing to their inherent characteristics, such as fast switching speeds and high input capacitance. The need for precise control and effective handling of these features becomes crucial in optimizing the performance of GaN HEMTs in various applications. Traditional drivers may struggle to provide the necessary slew rates and voltage handling capabilities, leading to suboptimal performance, increased power dissipation, and potential reliability issues.

In response to these challenges, the Smart-GaNTM technology introduced by NovaWave emerges as a superior solution: NW GaN devices can be operated exactly like a conventional Silicon MOSFET, without the need for special gate drivers, driving circuitry, or unique gate voltage clamping mechanisms. Our devices show great gate reliability with an allowed gate swing up to 20 V and a positive Vth of 3 V, which avoids any false turn-on event or the need for negative gate voltage. In addition, the Smart-GaNTM technology introduces several additional integrated features such as lossless current sensing, ESD protection, standby mode, under-voltage lockout, and over-temperature protection. All these features are directly embedded in the device and enable a safer and more efficient operation leading to unprecedented reliability and efficiency.