2023 – NovaWave’s offices in Taiwan and Hong Kong are established to increase our market penetration and proved optimal customer support.

2022 – NovaWave’s office in Biel is established and quickly attracts the best talents in GaN power devices and driver ICs becoming our core R&D center

2021 – Novawave’s is founded by a team of experts in power electronics with different industrial and academic backgrounds

2018 – Our team member develops 1.2 kV isolated power device drive chip

2017 – Our team members demonstrate the world’s first 650V gallium nitride Schottky diode with unprecedented on- and off-sate performance

2016 – Our team member files a PCT patent application for GaN Schotty Diodes and Multi-Channel Technology

2010 – Our team members begin to investigate silicon-based GaN epitaxy and GaN power devices